История изменений
Исправление wolverin, (текущая версия) :
Вот вам для примера
The different type of NAND Flash has different Program Erase P/E cycles (the processes of erasing and then writing a cell), and their typical P/E cycles are as follows:
SLC: 90,000 and 100,000
MLC: 1,500 to 3,000
3D TLC: 500 to 3,000
Исходная версия wolverin, :
Вот вам для примера
The different type of NAND Flash has different Program Erase P/E cycles (the processes of erasing and then writing a cell), and their typical P/E cycles are as follows:
SLC: 90,000 and 100,000
MLC: 1,500 to 3,000
3D TLC: 500 to 3,000